http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10112446-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1996-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73817f5e6fdb2f2734af53626c6341fc |
| publicationDate | 1998-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H10112446-A |
| titleOfInvention | Contact forming method and semiconductor device using the same |
| abstract | (57) Abstract: The effect of a natural oxide film on the formation of a contact in which a Ti layer and a TiN layer are sequentially formed on a silicon material by CVD, or the formation of a contact in which a TiN layer is formed on a metal silicide layer, Excessive nitridation and etching of the underlying Ti layer are prevented. SOLUTION: After forming a Ti layer 4, a heat treatment is performed to form a Ti silicide layer 5, and then a T gas is mixed with a mixed gas containing a titanium halide compound such as TiCl 4 and a nitriding agent. The iN layer 6 is formed by CVD. T on Ti silicide layer 5 After the io x layer is reduced and removed with hydrogen active species, TiN A layer may be formed. [Effect] An increase in contact resistance due to the remaining TiO x layer can be prevented. Further, in the TiN layer CVD process, the phenomenon that the Ti layer is excessively nitrided by the nitriding agent is prevented. Therefore, a low-resistance ohmic contact is achieved without forming a high-resistance Ti—Si—N layer or the like. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7923319-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001244214-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8268682-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019050304-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190029458-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9570346-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109136880-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019081238-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100541696-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106206273-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016225512-A |
| priorityDate | 1996-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.