| abstract |
(57) Abstract: In extracting a mask layout parameter of a semiconductor, a resistance value of a diffusion region is extracted with high accuracy. SOLUTION: A MOS transistor and a diffusion region are comprehensively processed as constituent elements of a MOS transistor, and a diffusion resistance is extracted in consideration of the shape of the diffusion region and contact information. Thereby, R1, R of the MOS transistor 1 2 and the rectangular condition of R3 and R4 of the MOS transistor 2 are distinguished, and an accurate resistance value is calculated. |