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filingDate 1995-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_277fed3cb4a9a5475117f21083af82c9
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publicationDate 1997-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0982983-A
titleOfInvention Semiconductor device and method of manufacturing semiconductor device
abstract (57) Abstract: In a method of manufacturing a semiconductor device, it is an object to thin a diaphragm such as a pressure sensor by controlling an etching amount and a diaphragm thickness. SOLUTION: A step of forming an insulating layer on a semiconductor substrate, a step of forming a semiconductor element on the insulating layer, a step of forming an electronic circuit on the semiconductor substrate or on the insulating layer, and the semiconductor element And a step of electrically connecting the electronic circuit with each other, further comprising: etching the semiconductor substrate from a surface on which the insulating layer is formed to form the semiconductor element. A part of the semiconductor substrate below the insulating layer including a portion where the semiconductor element is formed to form a cavity below the insulating layer including a portion where the semiconductor element is formed. .
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7705416-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002270856-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010177468-A
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Total number of triples: 31.