| abstract |
(57) [Abstract] [Purpose] To improve the operating speed of MOS transistors. A structure having a metal film or a silicon film 1 on a diffusion layer region under a gate side wall spacer of a MOS transistor is provided to reduce the parasitic resistance of the diffusion layer. For example, after forming a gate electrode, first and second insulating films that can be selectively etched are sequentially formed, the second insulating film is processed into a shape of a gate sidewall spacer, and the first insulating film is etched to form a gate. A cavity is formed under the side wall spacer, and a metal film or a silicon film is formed on the region of the diffusion layer 8 including the inside of the cavity. |