http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H097990-A

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filingDate 1995-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ca2d98e11e9da16002198d92b1edce1
publicationDate 1997-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H097990-A
titleOfInvention Semiconductor wafer cleaning method
abstract (57) [Summary] (Modified) [Purpose] To clean the semiconductor wafer before oxidation and to clean and remove metal ions adhering to the silicon oxide film, and to prevent re-adsorption of metal ions to the wafer after cleaning. [Structure] An organic functional group of a neutral ligand is bonded to a lone pair of metal ions separated from a semiconductor wafer to form a stable water-soluble complex. The adsorption rate is considerably low.
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priorityDate 1995-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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