| abstract |
(57) Abstract: An organic component contained in an organic SOG film is decomposed, and water and hydroxyl groups contained in the film are reduced. A gate insulating film, a gate electrode, and a source / drain region are formed on a single crystal silicon substrate. Next, the silicon oxide film 5 is formed on the entire surface of the device by using the plasma CVD method. Subsequently, the organic SOG film 6 is formed on the silicon oxide film 5. Then, by using the ion implantation method, the organic SOG film 6 is doped with one ion selected from the group consisting of silicon fluoride ions, boron fluoride ions, argon ions, boron ions, and nitrogen ions. And decomposes water and hydroxyl groups contained in the film. As a result, the organic SOG film 6 is the modified SOG film 7 Can be changed to |