| abstract |
(57) [Abstract] [PROBLEMS] To enable fine processing in a small number of steps without using an advanced exposure technique. Further, it is possible to easily perform fine processing of 50 nm or less. In a method for forming a pattern on a semiconductor surface for forming a periodic mask pattern on the surface of a Si substrate, oxygen gas and carbon monoxide gas are simultaneously applied to the surface of a Si substrate having periodic atomic steps. It is supplied and made into a plasma state to be adsorbed on the surface of the substrate, and then the substrate 10 is heat-treated at 1200 ° C., and the bonding layer 12 of silicon and carbon is formed on the surface of the substrate 10 along atomic steps. Are formed periodically. |