| abstract |
(57) [Abstract] [Purpose] Without forming irregularities on the surface of the organic base material or precoating a material other than the desired metal film, Provided is a method for forming a metal film on a surface of an organic base material, which enables a metal film to be formed on the surface of a smooth organic base material by a vapor phase growth method with sufficiently high adhesion. [Structure] The organic substrate surface is subjected to irradiation treatment of light having a wavelength for activating the bond or activation treatment of plasma treatment, and the following general formula X-Si- (OR) 3 (where X is a sulfur atom) is used. Which represents an organic reactive group containing R, and R represents —CH 3 or —CH 2 —CH 3. ) After performing a coupling treatment with a sulfur atom-containing silane coupling agent represented by A metal film is formed by a vapor phase growth method. |