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filingDate 1995-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e163d7f260d2ffa1c4e1d5bab07f4a2e
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publicationDate 1997-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0953188-A
titleOfInvention Method for producing preferentially oriented Pt thin film electrode and functional device using the same
abstract (57) [Abstract] [PROBLEMS] Si substrate or amorphous S on Si substrate A Pt thin film electrode having a (100) orientation is manufactured directly on iO 2 or via a buffer layer of Ti, Ta or the like. SOLUTION: A Ta buffer layer 3 is formed on a Si substrate 2 (S1), and a Pt thin film electrode 4 is formed thereon (S1). 2). At this time, the Pt thin film electrode 4 is not directly formed, but a Pt-Pb alloy thin film is first formed (S3). Then, the formed Pt-Pb alloy thin film is heat-treated to form Pb. Is gradually oxidized and deposited on the surface (S4). After that, after the heat treatment, the PbO layer formed on the surface is removed (S 5) By doing so, the Pt thin film electrode 4 is formed. As a result, a Pt thin film having a (100) orientation can be obtained, and a c-axis oriented lead lanthanum titanate ferroelectric thin film 5 which is a tetragonal structure dielectric thin film is obtained on the Pt thin film electrode 4 (S6). be able to.
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