http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09508885-A

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filingDate 1994-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1997-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H09508885-A
titleOfInvention Method for depositing materials in the form of monolayers
abstract (57) [Summary] A method for vacuum-depositing a monolayer on a surface, the monolayer being at least one selected from the groups IIa, IIIa, IVa, VIIIa, Ib, IIb, IIIb, and Vb of the periodic table. It contains one element. In the method, the surface is heated to a predetermined temperature (T) lower than 600 ° C., at least the above element is vacuum evaporated to deposit the element on the receptor surface, and the element on the receptor surface is The total atomic flow rate is 10 12 to 10 15 atoms / cm 2 · s. According to the invention, the formation of the monolayer is monitored in real time and the evaporation of the element is stopped when the complete formation of the monolayer is detected.
priorityDate 1993-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 23.