http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09505943-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-0085 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-012 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F38-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-008 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-012 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-33 |
| filingDate | 1994-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09505943-A |
| titleOfInvention | Method for manufacturing a capacitor |
| abstract | (57) [Summary]nThe present invention relates to a method for manufacturing a stacked capacitor consisting of alternating dielectric and conductive layers. The dielectric layer and conductive layer are deposited sequentially. The dielectric layer is deposited by polymerization of the element resulting from the remote nitrogen plasma dissociation of the organosilicon or organogermanium gas, and the conductive layer is the conductive element resulting from the precursor gas remote nitrogen plasma dissociation of the conductive element. Made by adhering. |
| priorityDate | 1993-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.