http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0949082-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3b0a3dbf8d6c9712d86ea1383fd5327 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J19-00 |
| filingDate | 1995-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5aac5662889eb0c0d390e920399bb5d0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_670fbf340840ebaff8a02449b58cdbcb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d9b6b0e1a160945ebdfdc2f870e2779 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7c4e4231d125f3446eef4963f6209a0 |
| publicationDate | 1997-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0949082-A |
| titleOfInvention | Method for producing Bi-containing composite metal oxide thin film |
| abstract | (57) Abstract: A Bi-containing complex metal oxide thin film is formed at a low temperature by a vapor phase growth method. It facilitates control of the film composition. As a raw material organic Bi compound, a dibismuthine compound represented by the following general formula (I) is used. Embedded image [Effect] Since the reaction activity of the Bi-Bi bond is high, Since it cleaves at a relatively low temperature, it is possible to form a film at a lower temperature than conventional compounds. Since the Bi content in the compound is twice as high as that of the conventional compound, Bi is easily incorporated into the film efficiently, and the film composition is easily controlled. |
| priorityDate | 1995-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.