http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0941149-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03G5-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1995-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7880731440963a18547509b469ff7a7f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a3297f10556f72e236b4fe9ba913f6a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2d4149aed9bfae6bf21cfd520296b87 |
| publicationDate | 1997-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0941149-A |
| titleOfInvention | Deposited film forming method and deposited film forming apparatus |
| abstract | (57) Abstract: The present invention is capable of processing a substrate having a relatively large area uniformly and with high quality at a high processing speed, has a short manufacturing time and is low in cost, and particularly It is an object of the present invention to provide a deposited film forming method and an apparatus therefor which are most suitable for manufacturing an electrophotographic photoreceptor having excellent characteristics. In order to achieve the above object, the present invention introduces a raw material gas into a discharge space of a vacuum-tight reaction container and introduces a high frequency power of a frequency higher than 13.56 MHz, particularly a high frequency power of 50 MHz to 450 MHz. In a deposition film forming method or apparatus by a plasma CVD method for decomposing the raw material gas by application to form a deposition film on a deposition target substrate in the discharge space, a metal portion also serving as an electrode of the reaction container and an insulating material And a wall portion of the insulating material portion of the reaction vessel is cooled with a coolant to form a deposited film. |
| priorityDate | 1995-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.