http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0936485-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2c8578e2265835db1117e94480d6e97c http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38520f366e74704305b34fb93a81121e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1995-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_721ceff8bbeec7ae1d26293544066941 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_695a2edafe3d9673e13ba3921cfda228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a79a40885fa37b8b6c4c1949aec39c78 |
| publicationDate | 1997-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0936485-A |
| titleOfInvention | Method for joining cleavage planes of semiconductor substrate and integrated semiconductor optical device |
| abstract | (57) [Abstract] [Objective] To provide a novel method for continuously forming different crystal layers in the lateral direction. [Structure] A p-type Al x Ga 1-x As (x = 0.5) first cladding layer 1 is formed on a semi-insulating GaAs base substrate 10. 2, p-type GaAs-type active layer 14, p-type Al x Ga 1-x A s (x = 0.5) second cladding layer 16 and p-type Ga The first semiconductor substrate 110 is formed by sequentially crystallizing the As contact layer 18. On the semi-insulating GaAs base substrate 20, n-type Al x Ga 1-x As (x = 0.5) First cladding layer 22, n-type GaAs active layer 24, n-type A l x Ga 1-x As (x = 0.5) second cladding layer 26, Then, the n-type GaAs contact layer 28 is sequentially crystal-grown to form the second semiconductor substrate 120. Thereafter, the first cleaved surface 110b formed by cleaving the first semiconductor substrate and the second cleaved surface 1 formed by cleaving the second semiconductor substrate 120. 20b and 20b are brought into close contact with each other on the flat plate 30, and in that state, the cleaved first and second semiconductor substrates 110a and 120a are heat-treated at 400 ° C. in a hydrogen atmosphere for about 1 hour. |
| priorityDate | 1995-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID89859 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522218 |
Total number of triples: 17.