http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09331042-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 1996-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b912b582df674614b40a8150734e3ad2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c6bbe723cd8ccb7d3856931da039246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1b6026b109be6281b034d5799c94a78 |
| publicationDate | 1997-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09331042-A |
| titleOfInvention | Method for growing hemispherical granular silicon |
| abstract | (57) Abstract: A method for forming an integrated circuit device incorporating a conductor having an uneven surface is provided. Hemispherical granular silicon (HSG-Si) Are formed on the polysilicon by plasma deposition. A wider range of substrate deposition temperatures can be used in HSG-Si plasma deposition than is used in low pressure chemical vapor deposition (LPCVD). Plasma deposition of HSG-Si is performed by electron cyclotron resonance chemical vapor deposition (ECR-CV D) The input power level is 100-15 in the system In the range of 00W, total pressure between 5-60mTorr, And the substrate temperature is 600 ° C. or lower. Silane and hydrogen gas mixture (H 2 / SiH 4 + H 2) mixture of silane and hydrogen gas during the dilution rate is about 70-99% of the hydrogen in is used in the ECR-CVD system. The polysilicon surface is cleaned of native oxide prior to plasma deposition of HSG-Si. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6287915-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012169614-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100768726-B1 |
| priorityDate | 1996-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.