| abstract |
(57) 【Abstract】 PROBLEM TO BE SOLVED: To maintain good flatness by an SOG film, To prevent deterioration of the transistor due to water and hydroxyl groups contained in the SOG film. A MOS transistor is completed by forming a gate insulating film, a gate electrode, and a source / drain region on a Si substrate. Then, a silicon oxide film 5 is formed on the entire surface of the device, an organic SOG film 6 is formed thereon, and then argon ions are injected into the SOG film 6 to decompose organic components in the film and Reduces water and hydroxyl content. By implanting ions into the organic SOG film 6, the SOG film is modified, the water content and the hydroxyl groups contained in the film are reduced, and the SOG film is less likely to absorb water, which is less likely to adversely affect the transistor. |