http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09306877-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1996-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fa39ae0c20fa3e3387fa680daf6ff91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c899feebfac4469fc05af4b6cefebfa |
| publicationDate | 1997-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09306877-A |
| titleOfInvention | Patterning method of Cu or AlCu alloy film and reactive ion etching apparatus |
| abstract | (57) Abstract: A Cu or AlCu alloy film can be patterned in a state where the temperature of an object to be processed is relatively low, undercut can be prevented, and it can be applied to the formation of fine Cu or AlCu wiring. An object of the present invention is to provide a method for patterning a Cu or AlCu alloy film and a reactive etching apparatus. Reactive ion etching is performed while introducing SiCl 4 and N 2 gas into a chamber and irradiating an object to be processed with KrF excimer laser light or the like. As a result, the release of CuCl, which is an etching product, from the etched surface is promoted, and a Si x N y film is formed on the side wall surface of the Cu film 4 exposed by etching, and undercut is suppressed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016511551-A |
| priorityDate | 1996-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.