http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09306870-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
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filingDate 1996-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_284e58b7c252b24db47e0b127ec953ce
publicationDate 1997-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H09306870-A
titleOfInvention Method of forming barrier film
abstract (57) Abstract: When a TiN thin film is deposited by a CVD method using a TiCl 4 / NH 3 gas system, Cl remains in the film. Further, since the TiN film obtained by the above CVD method has a columnar structure, it has a low barrier property against Cu. SOLUTION: A silicon substrate 2 having a trench formed in an oxide film is held on a substrate holding part 3, the inside of a chamber 1 is evacuated by a vacuum pump 17, and then the substrate 2 is heated by a substrate heating mechanism 4. After the substrate temperature is stabilized, NH 3 gas is supplied by opening the valve 12. Next, the valves 10 and 14 are opened, TiCl 4 and B 2 H 6 are supplied from the shower head 15, and a TiN film containing B is deposited in the trench of the substrate 2. Due to the strong reducing property of B 2 H 6 , TiN The residual chlorine concentration in the film was small, and as a result of adding B into the film, the film structure changed from columnar to amorphous, Sufficient barrier properties are exhibited even when copper is used as the wiring material.
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