| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3819ccc7155684a629d34be0ed2568b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cc813c8997f7d619ab4e0e14453d0433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a6a69da5879eb83f56f6876dba3e3cf |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1279 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G29-00 |
| filingDate |
1996-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d33af5baecfb0639c7791a7948fb05b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb5b937a1e57ba8e881d22199b91d9f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_510da9e303a0159657d0fd0131e14008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ceb62bf9dc94e8b355dbffdfff21743d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d940a6de4ec01bb1bafa711c5667079c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82a590732b52fee9465d18a835007afb |
| publicationDate |
1997-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H09301717-A |
| titleOfInvention |
Bi-layered structure ferroelectric thin film manufacturing method |
| abstract |
(57) Abstract: It is possible to grow a thin film of a strong derivative of Bi layered structure containing Pb by a chemical vapor deposition method. SOLUTION: The raw material compounds shown in the following Table 1 are placed in a raw material container ((1) to (4)) kept at a predetermined constant temperature in a low pressure CVD apparatus. After filling each g, argon was introduced into each container and the vapor of the raw material compound was entrained and sent into the reaction chamber, and the vapor of the raw material compound was pyrolyzed on the Pt / SiO 2 / Si substrate heated to 350 ° C. Then, the decomposed product is deposited on the substrate, and the obtained deposited film is heat-treated in an atmosphere containing oxygen, and the (Sr 0.8 Pb 0.2 ) Bi of the Bi layered structure showing the XRD spectrum of FIG. 1 is obtained. 2.0 Ta 2.0 O 9.0 is obtained. [Table 1] |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004111761-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013236052-A |
| priorityDate |
1996-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |