| abstract |
(57) Abstract: A laser annealing method capable of simultaneously annealing polycrystalline Si having different mobilities by an excimer laser beam is provided. SOLUTION: When a low temperature polysilicon thin film transistor is manufactured by converting an amorphous silicon film on a substrate forming a film transistor into a polysilicon by laser irradiation, a laser beam emitted from an excimer laser oscillator is used by using a Fourier transform phase hologram. , Shaping in the far field by imaging multiple points at desired positions with desired phases and shaping the beam intensity distribution in an arbitrary shape so as to correspond to the desired mobility change of the poly-siliconized portion And an irradiation step of forming an image of the laser beam on a substrate in a predetermined shaping pattern, moving the laser beam relative to the substrate, and irradiating the entire region to be polysiliconized. There is a laser annealing method characterized in that. |