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filingDate 1996-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1997-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H09289208-A
titleOfInvention Method for patterning semiconductor surface
abstract (57) [Abstract] [PROBLEMS] To enable fine processing in a small number of steps without using an advanced exposure technique. Further, it is possible to easily perform fine processing of 50 nm or less. In a pattern forming method of a semiconductor surface for forming a periodic mask pattern on a Si substrate surface, a gallium adsorption surface 11 and a silicon surface 12 are periodically formed on a surface of a silicon substrate 10 having periodic atomic steps. Patterning method in which the silicon surface 12 and the silicon oxide 13 are periodically formed on the surface of the substrate along atomic steps after the oxygen gas is supplied to the surface of the substrate and oxygen gas is supplied to the surface of the substrate.
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