http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09283856-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1996-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d1c849eea524ec8cc10b411adac0de5 |
| publicationDate | 1997-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09283856-A |
| titleOfInvention | Semiconductor laser |
| abstract | (57) [Abstract] [PROBLEMS] AlG having good temperature characteristics and easy to manufacture. Realize an aInP semiconductor laser. An n-type AlGaInP clad layer 3 is formed on an n-type GaAs substrate 1 with an n-type GaAs buffer layer 2 interposed therebetween. Active layer 5 made of undoped GaInP, p-type Al Al formed by stacking GaInP clad layer 8 and the like In a GaInP-based semiconductor laser, p-type AlGaIn Between the P clad layer 8 and the active layer 5 (Al xSL-a Ga 1-xSL + a ) 1-ySL-b In ySL + b P / (Al xSL + a Ga 1-xSL-a ) 1-ySL + b In ySL-b P strained superlattice layer (however, a is a positive number less than or equal to xSL, b is a positive number less than or equal to ySL) 7 To increase the effective hetero barrier between the p-type AlGaInP cladding layer 8 and the active layer 5. |
| priorityDate | 1996-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.