| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate |
1996-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f80057a08beaf7c04ca0f8643afecec9 |
| publicationDate |
1997-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H09266344-A |
| titleOfInvention |
Semiconductor laser |
| abstract |
(57) Abstract: A semiconductor laser using a gallium nitride-based material for an active layer is intended to reduce the threshold current density. A film thickness of the active layer is set to 3 nm or more and 6 nm or less. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100503693-B1 |
| priorityDate |
1996-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |