| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8aee37036592117fdfe9235a87ff782f |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
1996-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5e0b3140c61086df96f338cb7e6189c |
| publicationDate |
1997-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H09260293-A |
| titleOfInvention |
Method of forming conductive pattern |
| abstract |
(57) [Abstract] [Purpose] p-type or n-type controlled low resistance SiG It is possible to selectively form a conductive pattern made of e on a substrate at a low temperature of 500 ° C. or lower. [Structure] 500 is formed on a conductive base material formed in a pattern on the base material by a thermal CVD method using germanium halide containing a dopant gas and silanes as source gases. A conductive pattern made of low-resistance SiGe is selectively formed at a temperature of ℃ or less. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104795316-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100595068-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6291352-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8921205-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6958253-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7186582-B2 |
| priorityDate |
1996-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |