http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09260285-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 1996-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c1a8a735b33fa573f97ab6c58797502 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f71e0620a0dcea641bd4f76e532f2e6 |
| publicationDate | 1997-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09260285-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | Kind Code: A1 Abstract: A method for manufacturing a semiconductor device is provided which can form thin film transistors having different characteristics on the same substrate with high accuracy and economically. SOLUTION: A base coat film 2 and an amorphous silicon film 3 are deposited on an insulating substrate 1, a mask for selective implantation is formed on the amorphous silicon film 3, and a solution containing an impurity metal element is partially added. Is added in a minute amount and subjected to heat treatment to be crystallized to form a silicon film having different film qualities such as an amorphous silicon film 3 region and a crystalline silicon film 5 region. Next, the antireflection film 6 is selectively provided on the crystalline silicon film 5, and the entire surface of the insulating substrate 1 is irradiated with the laser beam 7 to obtain the peripheral drive circuit silicon film 8 and the pixel silicon film 10. Next, the thin film transistors A1 and B1 having different characteristics are formed in the peripheral drive circuit region 4 and the internal pixel region 9 of the semiconductor substrate 13. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005064486-A |
| priorityDate | 1996-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.