http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09259740-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J3-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J1-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J3-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J1-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-02 |
| filingDate | 1996-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c554a60d91d218d0140fbf55268b7d88 |
| publicationDate | 1997-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09259740-A |
| titleOfInvention | Vacuum microdevice and manufacturing method thereof |
| abstract | (57) Abstract: In a field emission type cold cathode structure vacuum microdevice, a second electrode (gate electrode) provided in the vicinity of a sharp tip of a first electrode (emitter electrode) is a first electrode depending on an applied voltage. The tip of the electrode is bent, and the shape varies. Kind Code: A1 A gate electrode 13 provided in the vicinity of a pointed tip of an emitter electrode 11 is shaped so that its thickness becomes thicker with increasing distance from the tip. This increases the mechanical rigidity. Further, since the gate electrode 13 is formed of the impurity layer provided on the silicon substrate, the conventional etchback process is unnecessary, the variation in shape is eliminated, and the manufacturing is facilitated. |
| priorityDate | 1996-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.