| abstract |
(57) 【Abstract】 PROBLEM TO BE SOLVED: Vanadium dioxide (V O 2 ), a vanadium oxide thin film that has a temperature change rate of specific resistance similar to that of O 2 ) and does not cause a metal-semiconductor transition accompanied by a change in crystal structure from a temperature below freezing to over 100 ° C., and this thin film is a bolometer. Provided is an infrared sensor which can be used up to a temperature as high as 100 ° C. or higher without being cracked or peeled by using it as a material for infrared sensor of infrared type. A vanadium oxide thin film prepared by a sputtering method or a sol-gel method and heat-treated in air is reduced by an argon-hydrogen mixed gas, and when the vanadium oxide is expressed as VO x , the range of x is It is a vanadium oxide thin film satisfying 1.875 <x <2.0. Also, this thin film does not have a metal-semiconductor transition at around 70 ° C. like a typical VO 2 thin film. This material is applied as a material for a bolometer type infrared sensor. |