| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
1996-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_362a4f8f2314257be32d3fad4ee279ed |
| publicationDate |
1997-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H09232423-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
(57) [Abstract] [PROBLEMS] To suppress an increase in contact resistance of a via contact hole in an aluminum-based multilayer wiring. An upper surface of a lower wiring 103aa and the like includes a conductor film 11 containing at least one of tungsten and titanium. 3, the side surface of the lower wiring 103aa and the like is covered with a conductor film 123 containing at least one of tungsten and titanium. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007208058-A |
| priorityDate |
1996-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |