| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7acd9416af412b5972feb55a5e652ea2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01B7-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01D5-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-84 |
| filingDate |
1996-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e8e87b552895e055261c054246cd9db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e54644782a2e403d8793369f07398758
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84d3b36030e584589dc3368fd86ead2c |
| publicationDate |
1997-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H09228055-A |
| titleOfInvention |
Manufacturing method of microcrystalline silicon carbide thin film and piezoresistor using the manufacturing method |
| abstract |
(57) An object of the present invention is to provide a method for producing a microcrystalline silicon carbide thin film, which can form a microcrystalline silicon carbide thin film at a relatively low substrate temperature using a general semiconductor material gas as a source gas. SOLUTION: SiH 4 , CH 4 as a source gas and H 2 as a diluent gas were introduced into a plasma generation chamber 1a via a gas inlet I G. When a thin film is formed by the plasma generated in the plasma generation chamber 1a, a frequency-variable AC power supply AC is supplied to the substrate 10 held on the substrate support 4 in the reaction chamber 1b via the matching box 3. , The power density is approximately 0.09 W / cm 2 to approximately 0.22 within a frequency range of approximately 1 [kHz] to approximately 500 [kHz]. An AC bias voltage of W / cm 2 was applied. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005083961-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000315805-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6926926-B2 |
| priorityDate |
1996-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |