http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09223800-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 1996-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe24d1ed587df9976b29b4a67444df69 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7ea95cc3f2c6d573c31ce7572ad9bc5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96bda1ed7b5c7590272e4753eba82add http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5b7be0bf2c040ca156b745becaf6d3d |
| publicationDate | 1997-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09223800-A |
| titleOfInvention | Thin film manufacturing method and thin film transistor manufacturing method |
| abstract | (57) [Summary] [Problem] Source / drain regions cannot be sufficiently activated. SOLUTION: An active semiconductor layer 2 and a gate insulating layer 3 are deposited on a transparent glass substrate 1. Gate electrode 4 on it Then, ions containing phosphorus P and ions containing hydrogen H are accelerated by an accelerating voltage and introduced into the active semiconductor layer 2 in order. At this time, the latter accelerating voltage of ions containing hydrogen H is set to the former phosphorus P. The source region 5 and the drain region 6 are formed by setting the voltage lower than the acceleration voltage of the ions including. After forming the interlayer insulating layer 7, the contact hole 11, the source electrode 8 and the drain electrode 9 are formed to obtain a thin film transistor. As a result, the source / drain regions 5 and 6 are sufficiently activated. Resistance can be reduced. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6579749-B2 |
| priorityDate | 1996-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.