http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09223668-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 1996-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_602a5fc5738819ab532d3659431364f8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d14ecc1e6d4f827d591b8d41248ff88e |
| publicationDate | 1997-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09223668-A |
| titleOfInvention | Semiconductor substrate and method for processing semiconductor substrate |
| abstract | (57) Abstract: A method for treating a semiconductor substrate, which effectively reduces precipitates on the surface of a semiconductor substrate on which a semiconductor single crystal film is formed and enables formation of an oxide film having a long dielectric breakdown life. To provide. A semiconductor substrate is not etched on the surface of the semiconductor substrate, and a step of selectively etching the semiconductor substrate is performed under the condition that a precipitate exposed on the surface of the semiconductor substrate is etched. And a step of forming a single crystal film of a semiconductor which constitutes the semiconductor. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005123241-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004535685-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4552415-B2 |
| priorityDate | 1995-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.