http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09221398-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 |
| filingDate | 1996-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14a25fcf18ed60520e1c96ebd1a75ece http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1eeacb8b251089fae8661fc308b97f8a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc84374ebc04649e3c71816f066626c6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66f97417f4b94bdeab2f568e87c1ee5c |
| publicationDate | 1997-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09221398-A |
| titleOfInvention | Crystal growth method for group III nitride compound semiconductor |
| abstract | (57) Abstract: When a gallium nitride crystal is grown on a substrate, cracks are less likely to occur in the substrate or the crystal growth layer on the substrate. An indium phosphide substrate 201 is used as a substrate for crystal growth of gallium nitride layers 203, 204, for example, and crystal growth is performed on an indium phosphide (100) plane. At that time, first, on the indium phosphide substrate, a single element of phosphorus or an element exhibiting a vapor pressure higher than that of phosphorus in indium phosphide is not included, and the difference in lattice constant from indium phosphide is 2% or less. A crystal (for example, In 0.53 Ga 0.47 As layer 202) may be formed, and then a group III nitride compound semiconductor layer may be provided on the crystal to prevent desorption of phosphorus from the substrate during crystal growth. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002542624-A |
| priorityDate | 1996-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.