http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09213762-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_551dafb2943541fa9a4ad32cd9f26a33 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 1996-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_262e5f9c3bca1017ffef2e73be0a54cf |
| publicationDate | 1997-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09213762-A |
| titleOfInvention | Method of evaluating insulation in semiconductor device |
| abstract | (57) Abstract: [PROBLEMS] To provide an evaluation method capable of evaluating lateral insulation in a semiconductor device. SOLUTION: A pair of conductive patterns 1 formed in a comb shape so that each convex portion corresponds to each concave portion. 1 and 12 are formed apart from each other on the main surface side of the semiconductor substrate, and the insulating property between the pair of conductive patterns 11 and 12 is evaluated by measuring the current flowing between the pair of conductive patterns 11 and 12. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6710393-B2 |
| priorityDate | 1996-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 |
Total number of triples: 15.