| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
1996-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_152a6d7a7bd9f6d30adce451b91da065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f6c9df4de18312fc20449eae604a6fc |
| publicationDate |
1997-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H09213635-A |
| titleOfInvention |
Heteroepitaxial semiconductor substrate forming method, compound semiconductor device having such heteroepitaxial semiconductor substrate, and manufacturing method thereof |
| abstract |
(57) Abstract: In a compound semiconductor device formed on a heteroepitaxial substrate composed of a III-V group compound semiconductor layer formed on a Si substrate, an object is to increase the sheet resistance of the heteroepitaxial substrate. . A Si substrate having an oxygen-induced stacking fault density of 30 cm −2 or higher is used, and a group III-V compound semiconductor layer deposited directly on the Si substrate is provided with a group V element of As, It is configured by using a material that does not contain P but contains Sb. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140014216-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5892476-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012046676-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9129808-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010226061-A |
| priorityDate |
1996-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |