| abstract |
(57) Abstract: A halftone phase shift mask that has a desired optimum optical characteristic value with high accuracy and that can suppress a change in optical characteristic due to cleaning or the like during manufacturing and use of the mask, The manufacturing method is provided. In a halftone type phase shift mask in which a light semi-transmissive portion is composed of a thin film made of metal, silicon, and a substance containing oxygen and / or nitrogen as main constituent elements, a surface layer of the light semi-transmissive portion is formed. The total ratio of Si and O in the above is 80 atomic% or more. Alternatively, a cleaning resistant layer is formed on the surface layer of the light semi-transmissive portion. Also, for example, Mask blanks formed by forming a light semi-transmissive part material layer on a transparent substrate are pre-treated with a treatment liquid (for example, sulfuric acid) that elutes components that are eluted in the cleaning step associated with mask manufacturing or use, and then eluted in the cleaning step. The elution amount of the component is set to a minute amount, and then the thin film layer is patterned to form a light semi-transmissive portion to manufacture a phase shift mask. |