http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09199978-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_72706c59aa36ea1d17991ff72dafaa2a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-175 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-17 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04R17-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-09 |
| filingDate | 1996-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35526ccb57ff0985f165523c80245076 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_209dffa0e210e5aee68b0ca5111fd05a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9359ba555e7cb7cfa31f5b3baee04dc3 |
| publicationDate | 1997-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09199978-A |
| titleOfInvention | Resonant acoustic isolator for thin film acoustic resonator |
| abstract | (57) Abstract: An effective resonant acoustic isolator capable of supporting a thin film acoustic resonator is provided. SOLUTION: An acoustic resonance isolator (10) of the present subject Includes at least one pair of layers of materials having different acoustic impedances. The isolator material is deposited in alternating layers of high and low impedance material, each layer having a thickness of 1/4 acoustic wavelength at the resonant frequency. Preferably, silicon dioxide (SiO 2 ) is relatively accessible in the semiconductor industry, has relatively low acoustic impedance, has very low inherent acoustic loss, and is low in silicon dioxide (SiO 2 ) that can be deposited using various convenient methods. Hafnium oxide (HfO 2 ) which is used as an impedance material and which can form a dielectric having a relatively high acoustic impedance, a high hardness, and a high density by vapor deposition is used as a high acoustic impedance material. Since the entire stack of alternating layers of SiO 2 and HfO 2 can be deposited in the same chamber by electron beam deposition, manufacturing costs can be kept low. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022168498-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003536341-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4843175-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007129391-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001089236-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7235915-B2 |
| priorityDate | 1996-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.