| abstract |
(57) An object of the present invention is to provide a resin-encapsulated semiconductor device which is less likely to generate thermal stress and has excellent solder reflow resistance, temperature cycle resistance after mounting, humidity resistance reliability and the like. An electrode (2) of a semiconductor element (1) and a lead (4) are electrically connected to each other, and at least a circuit formation surface of the element is (a). A resin-encapsulated semiconductor device obtained by encapsulating 5 with a resin composition containing an epoxy resin, (b) curing agent, (c) curing accelerator, and (d) inorganic filler as essential components, which constitutes the above resin composition. (A) contains a component selected from a bifunctional epoxy resin having a biphenyl skeleton or a naphthalene skeleton, and the resin component consisting of (a) and (b) is 150 The viscosity at ℃ is 3 poise or less, (d) is 9 5% or more is a substantially spherical powder having a particle size of 0.1 to 100 μm and an average particle size of 2 to 20 μm, And (d) is from 75 to 92. The resin composition has a minimum melt viscosity of 3000 poise or less in the pressure molding process and a thermal expansion coefficient of 1.0 × 10 −5 / ° C. or less after the pressure molding. |