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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
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filingDate 1996-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8745cbb74cd1de50b52b075f832df7af
publicationDate 1997-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H09199490-A
titleOfInvention Method for forming interlayer insulating film
abstract (57) Abstract: An inorganic insulating film is formed on an organic insulating film while preventing the generation and decomposition of cracks in the organic insulating film. An insulating film can be formed. SOLUTION: A first inorganic insulating film 3 is formed on an organic insulating film 2 formed on a substrate 1 by a thermal CVD method in which thermal energy is applied to cause a chemical reaction, and then a first inorganic insulating film 3 is formed by a plasma CVD method. A second inorganic insulating film 4 is formed on the film 3. Then, the above-mentioned thermal CVD method is carried out by using a source gas containing at least a silane-based gas and an oxidative gas, and -50 It is performed within a temperature range of ℃ to 400 ℃. Prior to forming the first inorganic insulating film 2, the organic insulating film 2 formed on the substrate 1 is irradiated with plasma of an inert gas, or the organic insulating film 2 is formed. An alcohol solvent may be applied to the surface.
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