http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09198891-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C17-00 |
| filingDate | 1996-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4207c203560b757670b6323259cf1dc7 |
| publicationDate | 1997-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09198891-A |
| titleOfInvention | Semiconductor memory device |
| abstract | To provide a semiconductor memory device capable of reducing the layout area of a redundant circuit and improving the redundancy efficiency. In a semiconductor memory device that is section-divided in the word line direction and activates only one section at the time of reading, a redundant circuit 200a is arranged in parallel between two sections 10 and 11 arranged continuously adjacent to each other. And eight redundant memory cell blocks RMBK0 -RMBK7, four redundant memory cell blocks RMBK0 to RMBK3 are used for the section 10, and the remaining four redundant memory cell blocks RMBK4 to RMB K7 is used for section 11 and the second redundant sense amplifier RSS / A0 is used for two sections 10 and 11 Shared by |
| priorityDate | 1996-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.