| abstract |
(57) Abstract: A photolithography process that has a low resistance and a wiring structure of electrodes that has sufficient chemical resistance in the subsequent process, reduces deterioration of various chemicals used in the photolithography process, and performs one-time photolithography. An object of the present invention is to provide a thin film transistor substrate capable of forming the wiring structure of the low resistance electrode only by the steps, and a manufacturing method thereof. First, a low resistance metal tungsten film 3 is formed. 2. Then, a tantalum film 33, which is a metal film having excellent chemical resistance, is sequentially formed by a sputtering method, and subsequently, a resist film 34 is applied on the tantalum film 33, and the resist film 34 is exposed and developed. A tantalum film 33, which is a metal film having excellent chemical resistance, is formed by forming a mask in a wiring shape and isotropically plasma-etching the tantalum film 33 and the tungsten film 32. Is deposited on the entire surface of the substrate by a sputtering method to form a tantalum film 35. Is anisotropically subjected to reactive ion etching, and finally the resist film 34 is peeled off to form a wiring structure. |