http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0917732-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b3763aa0cdd9f34607453119c627586a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate | 1995-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a7f12ea81b739ca451a0809c1c04549 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d3e8b4e229b8ed95a51c64214045665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23c4d63162f0dc3df622b0439462b4d3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75a7ddffba654a215846ca09310ddffa |
| publicationDate | 1997-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0917732-A |
| titleOfInvention | Semiconductor manufacturing method and apparatus |
| abstract | (57) [Abstract] [PROBLEMS] To provide a semiconductor manufacturing method and device that improve the yield of an object to be processed such as a semiconductor wafer and the operating rate of the semiconductor manufacturing device. An outer tube member 3 that forms a vacuum processing container 2 that is shielded from the outside air and into which a process gas is introduced, an inner tube member 4 that is detachably arranged in an inside 3a of the outer tube member 3, and an outer tube member 3 A gas introduction part 5a communicating with the process gas and passing through the process gas, a plurality of porous members 6 provided in the gas introduction part 5a, a vacuum in the vacuum processing container 2 or a vacuum exhaust pump 7 for exhausting the process gas. The process gas having passed through the porous member 6 is introduced into the inner pipe member 4, and the CVD process of the semiconductor wafer 1 is performed in the inner pipe member 4. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004153265-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003007634-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005307238-A |
| priorityDate | 1995-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.