| abstract |
(57) [Summary] [Object] To provide a method for manufacturing a semiconductor device such as a TFT having a high electric field effect mobility, which can reduce the interface state density between a semiconductor thin film and a second insulating film. In the method of manufacturing a semiconductor device, a first insulating film 2, an amorphous semiconductor thin film 3a, and a second insulating film 4 are sequentially formed on one main surface 1a of an insulating substrate 1, and all films are formed. Or the step of forming the amorphous semiconductor thin film 3a and the second insulating film 4 is continuously performed without exposing to the atmosphere, and then laser light is applied to the other main surface of the insulating substrate 1. Irradiation from the 1b side crystallizes the amorphous semiconductor thin film 3a. |