http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09167831-A

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filingDate 1995-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5e21e76361388a46494f534db7bbdb5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2130f53fa73b2dce90a2aec7104addf1
publicationDate 1997-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H09167831-A
titleOfInvention Semiconductor memory device and method of manufacturing the same
abstract In a DRAM having stacked and COB type memory cells, the surface ratio of storage node electrodes contributing to capacitors is increased. A storage node electrode is connected to a contact plug 117A via an upper node contact hole. N-type silicon film 123 and N The lower cell plate electrode composed of the lower silicon plate spacer 126 is covered with the storage node electrode 134 through the titanium oxide film 129a which is the lower capacitor insulating film, and is connected to the lower cell plate electrode. The upper cell plate electrode composed of 5 covers the storage node electrode 134 via the titanium oxide film 139 which is the upper capacitance insulating film.
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priorityDate 1995-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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