http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09162127-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b0120933550ea729b9f3186c3772531b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1995-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec90c5fcda5beb9f308a7678968a3ba3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71123c0e13a52506a933df1d9b18cc2e |
| publicationDate | 1997-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09162127-A |
| titleOfInvention | Epitaxial growth method |
| abstract | (57) Abstract: GaN and Al are formed in a partial region on a single Si substrate. Forming a laminated body of GaN or InGaN and GaN, GaAs and AlGaAs or InGaAs in other regions Another object of the present invention is to provide an epitaxial growth method for forming a laminated body of GaAs and GaAs. SOLUTION: Trimethylgallium is used as a Ga source and trisdimethylaminoarsine is used as an arsenic source on a Si substrate where a partial region of a stacked body of GaN and AlGaN or InGaN and GaN is removed and exposed. Then, a first GaAs layer is formed, dimethyl aluminum hydride is used as an Al source, trimethylindium is used as an In source, trimethylgallium is used as a Ga source, and trisdimethylaminoarsine is used as an arsenic source. Then, AlG is formed on the first GaAs layer. Epitaxial growth having a step of forming an aAs layer or InGaAs layer, using trimethylgallium as a Ga source, and using trisdimethylaminoarsine as an arsenic source, and forming a second GaAs layer on the AlGaAs layer or InGaAs layer. Is the way. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009019067-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002299253-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015512139-A |
| priorityDate | 1995-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.