http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09157087-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 |
| filingDate | 1996-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_397a0ce034f7b380a0d742b45b235174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_212aa04048118de7635dd7366552f2db |
| publicationDate | 1997-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09157087-A |
| titleOfInvention | High surface area silicon substrate manufacturing method |
| abstract | (57) Abstract: A method for forming a high surface area silicon substrate is provided. A mask is placed over the substrate to define a deposition area (step 31). Silicon and at least one unequal member such as a plastic member, Co-deposited with silicon over this deposition area (step 32). The unequal material is then selectively removed, leaving the silicon behind (step 33), resulting in a deposited high surface area silicon substrate. |
| priorityDate | 1995-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.