| abstract |
(57) [Summary] [Object] To provide a method for obtaining a high-quality polycrystalline silicon film. [Structure] A substrate is loaded from the preliminary chambers 101 and 102. Then, the substrate is moved in the processing chambers 103 to 107 by the robot arm 109. In each of these processing chambers, an amorphous silicon film is formed and the amorphous silicon film is crystallized sequentially, and finally the substrate having the polycrystalline silicon film on its surface is exposed to the outside air even once. Can be obtained without. In particular, when the amorphous silicon film is crystallized, a processing chamber for adding a metal element that promotes crystallization is provided. |