http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09153490-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
filingDate 1995-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_192e16818c6d0a4a37e6fe84bd8b94bf
publicationDate 1997-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H09153490-A
titleOfInvention Semiconductor device and manufacturing method thereof
abstract (57) Abstract: A semiconductor device having an interlayer insulating film having a low relative permittivity and excellent flatness, which does not hinder high-speed operation, and a manufacturing method which is easy to control the manufacturing conditions and is low in cost. Is intended. The present invention provides a method for forming an interlayer insulating film, comprising: A step of forming the first plasma SiO 2 film 31 and SiH 4 One of a mixed gas of gas and H 2 O 2 , a mixed gas of that gas and fluorine, and a mixed gas of H 2 O 2 and SiHxFy at 665 pa or less at a temperature of -10 ° C or higher and + 10 ° C or lower. A step of reacting to form a reflow silicon oxide film 34 on the first plasma SiO 2 film 31, and a second plasma CVD insulating film 35 on the reflow silicon oxide film 34 by CVD. And a step of annealing thereafter. Further, the film thickness of the reflow silicon oxide film 34 is 30% or more and 50% or less of the total film thickness of the interlayer insulating films 33, 34, 35.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6723628-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6812123-B2
priorityDate 1995-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14917
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559562

Total number of triples: 18.