http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09129733-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-947 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1996-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d32f53f38f76dd8e0f41a18a6ff60246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2aeeed2ee4de3e5d57582db3791ad7c9 |
| publicationDate | 1997-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09129733-A |
| titleOfInvention | Self-aligned metallurgy |
| abstract | (57) [Abstract] (Corrected) [Object] During photolithography, a high density metal line image in a multi-layer semiconductor device and a sublithography contact hole (connection hole) caused by an undesired superposition of contact openings are formed. A filling method is provided. A contact opening having a width of 2M is formed in a first mask layer on an insulating layer on a substrate having a substrate metallization and then a second mask layer is formed on and in the first mask layer. Then, a line image 40, 50 having a minimum dimension M is formed in the second mask layer. A sacrificial material photoresist or a non-corrosive material Si is used for both mask layers. N, Al 2 O 3 is used. A contact hole is formed up to the substrate metallization 20 by etching, and etching can be performed at a position below the line image that is not aligned with the first contact opening. The first group opening 110 is formed under the. Next, the second and first mask layers are removed by RIE, Al and W are deposited in the connection holes 25 and the first group openings, the connection portions and the metal coated wires are formed, and the insulation layers are coplanar. |
| priorityDate | 1995-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.