http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09116002-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 1995-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f85a735cc565acd96b68c03369dd988 |
| publicationDate | 1997-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09116002-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) Abstract: A method for manufacturing a semiconductor device is provided, which prevents the permeation of moisture, which causes deterioration of the life of a transistor, and forms an interlayer insulating film having a small leak current between wirings in the same layer. After forming the aluminum wiring on A semiconductor substrate, by forming a S i -H group less silicon oxide film 3 by ECR plasma CVD method, followed by an ECR plasma CVD method S i -H group Many silicon oxide films 4 To form a film. S i by -H group less the silicon oxide film 3 can be reduced leakage current between the same layer wiring, S The silicon oxide film 4 having a large amount of i- H groups prevents the permeation of moisture into the transistor. |
| priorityDate | 1995-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.