| abstract |
Kind Code: A1 Abstract: A welding method is provided in which the required combination of integrity and conductivity can be obtained and which does not require more than one precursor. SOLUTION: A titanium silylamide complex, a tantalum silylamide complex, and a substance containing at least one selected from the group consisting of titanium nitride, titanium nitride silicide, tantalum nitride, tantalum nitride silicide, and mixtures thereof are used. A chemical vapor deposition method for forming on a substrate by exposing the substrate to at least one silylamide complex selected from the group consisting of: And the temperature of the substrate is sufficient to react the silylamide complex to form the material. |